Effects of ultraviolet illumination and a parylene-A activation layer on the gas phase sensing characteristics of ZnO nanobridges

ZnO nanowires (NWs) are good candidates for chemical sensing because of their high surface-to-volume ratio. In this work, ZnO nanobridge sensors were fabricated utilizing a novel method which uses carbonized photoresist (C-PR) as a nucleation layer. The use of C-PR allows simultaneous growth and integration of NWs to lithographically-defined features. The nanobridge sensors are shown to be sensitive to the presence of O2, H2O, CO, and H2/N2 gas. However, since ZnO dissolves in water, a protective layer is necessary for these sensors to be used in the liquid or vapor phase. A chemical vapor deposition (CVD) process for amino-[2,2]paracyclophane (parylene-A) was developed and used to successfully protect the NWs. Gas sensing measurements were performed on bare and parylene-A coated devices with and without UV illumination. The parylene-A layer was found to attenuate sensitivity to O2 and H2O, and UV illumination was found to decrease the response time.